Memory and fabrication method thereof

ABSTRACT

A memory and a method for fabricating the memory are provided. The memory includes a bit-line layer on a semiconductor substrate and having bit lines arranged in the bit-line layer. The memory also includes a shielding layer on the bit-line layer and having a conductive shielding structure arranged in the shielding layer. The conductive shielding structure is within a top-view projection area of the bit lines and is grounded. Further, the memory includes a word-line layer on the shielding layer and having word lines arranged in the word-line layer.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application claims the priority of Chinese patent application No.201710117402.3, filed on Mar. 1, 2017, the entirety of which isincorporated herein by reference.

FIELD OF THE DISCLOSURE

The present disclosure generally relates to the field of semiconductortechnology and, more particularly, relates to a memory and a fabricationmethod thereof.

BACKGROUND

A memory is a basic device in the field of semiconductor technology. Thememory usually includes a memory structure in a substrate and logicallines related to read and write operations including bit lines and wordlines. When a chip includes a memory, the performance of the memory hasa large impact on the yield of the chip.

However, the write interference of the conventional memory is large, andthe performance of the conventional memory still needs to be improved.The disclosed device structures and methods are directed to solve one ormore problems set forth above and other problems.

BRIEF SUMMARY OF THE DISCLOSURE

One aspect of the present disclosure includes a memory. The memoryincludes a bit-line layer on a semiconductor substrate and having bitlines arranged in the bit-line layer. The memory also includes ashielding layer on the bit-line layer and having a conductive shieldingstructure arranged in the shielding layer. The conductive shieldingstructure is within a top-view projection area of the bit lines and isgrounded. Further, the memory includes a word-line layer on theshielding layer and having word lines arranged in the word-line layer.

Another aspect of the present disclosure includes a method forfabricating a memory. The method includes providing a bit-line layer ona semiconductor substrate and having bit lines arranged in the bit-linelayer. The method also includes providing a shielding layer on thebit-line layer and having a conductive shielding structure arranged inthe shielding layer. The conductive shielding structure is within atop-view projection area of the bit lines and is grounded. Further, themethod includes providing a word-line layer on the shielding layer andhaving word lines arranged in the word-line layer.

Other aspects of the present disclosure can be understood by thoseskilled in the art in light of the description, the claims, and thedrawings of the present disclosure.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a schematic diagram of a position relationshipbetween word lines and bit lines in an exemplary memory consistent withvarious disclosed embodiments of the present disclosure;

FIG. 2 illustrates a cross-sectional view of a memory structure ofanother exemplary memory consistent with various disclosed embodimentsof the present disclosure;

FIG. 3 illustrates a schematic diagram of a portion of a shielding layerof another exemplary memory consistent with various disclosedembodiments of the present disclosure;

FIG. 4 illustrates a schematic diagram of a portion of another exemplarymemory consistent with various disclosed embodiments of the presentdisclosure; and

FIG. 5 illustrates an exemplary fabrication method for forming a memoryconsistent with various disclosed embodiments of the present disclosure.

DETAILED DESCRIPTION

Reference will now be made in detail to exemplary embodiments of thedisclosure, which are illustrated in the accompanying drawings. Whereverpossible, the same reference numbers will be used throughout thedrawings to refer to the same or the alike parts.

In an exemplary memory structure, word lines may be distributedperpendicular to bit lines. Referring to FIG. 1, solid-line portions mayrepresent the bit lines, and dashed-line portions may represent the wordlines. The word lines may be located in a word-line layer, and the bitlines may be located in a bit-line layer. The bit-line layer may be on asemiconductor substrate, a shielding layer may be on the bit-line layer,and the word-line layer may be on the shielding layer.

In the present disclosure, that one layer is on another layer means alayer is directly above or indirectly above another layer. In otherwords, the two layers may be directly adjacent to each other, or may bespaced by other layers or other structures.

The distribution of the word lines and the bit lines is not limited tothe manner illustrated in FIG. 1. For example, the word lines may bedistributed un-perpendicular to the bit lines.

The shielding layer may include a conductive shielding structure. Theconductive shielding structure in the shield layer may be grounded toavoid the accumulation of charges in the shielding structure.

A memory structure may be formed in the semiconductor substrate. FIG. 2illustrates a cross-sectional view of the memory structure. The memorystructure may include a drain 21, a selection gate 22, a control gate23, and a source 24.

In one embodiment, the shielding structure may be within a top-viewprojection area of the bit lines, and an edge of the shielding structuremay coincide with entire or portions of the projection area of the bitlines. The top-view direction may be referred to a directionperpendicular to the surface of the semiconductor substrate.

The shielding structure may include comb-shaped metal structures. Thecomb-shaped metal structures may be within the top-view projection areaof the bit lines. The number of the comb-shaped metal structures withinthe top-view projection area of each bit line may be one or more.

The comb-shaped metal structure within the top-view projection area ofeach bit line may include a first comb-shaped metal structure and asecond comb-shaped metal structure that are engaged with each other.Both the first comb-shaped metal structure and the second comb-shapedmetal structure may be grounded.

It may be difficult to implement a process for providing a metalstructure having the same area as the projection area of the bit linewithin the top-view projection area of each bit line, and a thickness ofthe metal structure may be non-uniform. The comb-shaped metal structuremay be easily implemented in the process for forming the memory. Theshielding structure may also include other shapes, and is not limited tothe comb-shape.

The metal structures provided within the top-view projection area of thebit lines may have a desired shielding effect. Since a coupling voltageresults from the bit lines, the shielding structure within theprojection area of the bit lines may reduce the coupling voltage. Othercomponents, such as a component having logical interconnectionfunctions, may be provided in the regions of the shielding layer outsidethe shielding structure. Thus, the write interference between the bitline and the adjacent bit lines may be reduced during the writeoperation by providing the shielding structure within the projectionarea of the bit lines, and the regions of the shielding layer outsidethe shielding structure may be sufficiently utilized.

Other structures, such as a connection structure, may be provided in theregions of the shielding layer outside the top-view projection area ofthe bit lines. In one embodiment, the connection structure may beprovided to electrically connect one of the word line and the bit lineto the memory structure in the semiconductor substrate. In anotherembodiment, a logical interconnection structure may be provided toconnect to a memory peripheral logic circuit to implement the logicalfunctions.

In one embodiment, the connection structure may be electrically isolatedfrom the shielding structure, and may connect the word line to the gateof the memory structure. In another embodiment, when the shielding layeris provided between the bit lines and the semiconductor substrate, theshielding structure may connect the bit lines to the memory structure inthe semiconductor substrate. In certain embodiments, the shieldingstructure may connect other control lines to the memory structure.

The shielding structure may be provided not within the top-viewprojection area of the bit lines. In one embodiment, the shieldingstructure may be provided in accordance to the bit lines, and the areawhere the shielding structure is located may be smaller or larger thanthe projection area of the bit lines. In another embodiment, theshielding structure may be provided in accordance to the word lines, andmay be provided within a top-view projection area of the word lines. Incertain embodiments, the shielding structure may be provided in othermanners.

FIG. 3 illustrates a schematic diagram of a portion of the shieldinglayer consistent with disclosed embodiments. Referring to FIG. 3, theshielding layer may include comb-shaped metal structures 31 within thetop-view projection area of the bit lines. FIG. 3 illustrates twocomb-shaped metal structures 31 respectively corresponding to differentbit lines. Each comb-shaped metal structure 31 may include a firstcomb-shaped metal structure and a second comb-shaped metal structurehaving their comb teeth engaged with each other. Both the firstcomb-shaped metal structure and the second comb-shaped metal structuremay be grounded.

In one embodiment, the shielding layer may include a connectionstructure 33 for electrically connecting one of the word line and thebit line to the memory structure in the semiconductor substrate. Forexample, the connection structure 33 may connect the word line and theselection gate 22 illustrated in FIG. 2.

In one embodiment, the shielding layer may include a logicalinterconnection structure 34 for connecting to a peripheral logiccircuit of the memory to implement the logical functions.

The comb-shaped metal structure 31, the connection structure 33, and thelogical interconnection structure 34 in the shielding layer may be madeof a conductive material, such as copper, aluminum, or polysilicon, etc.

FIG. 4 illustrates a schematic diagram of a portion of a memoryconsistent with disclosed embodiments. Referring to FIG. 4, theexemplary memory may include a semiconductor substrate 41, threeexemplary bit lines 42, 43, and 44, a portion of the shielding structure45 and a word line 46. The bit lines 42, 43, and 44 may be in a firstmetal layer, the shielding structure 45 may be in a second metal layer,and the word line 46 may be in a third metal layer.

When performing a write operation on a bit line, a high voltage may needto be applied on the bit line, causing interference to adjacent bitlines. The interference between the bit line and the adjacent bit linesmay result from the coupling voltage, and the value of the couplingvoltage may be related to the capacitance and the voltage of eachportion of the memory. The capacitance of the bit line may include acapacitance between the metal layer where the bit line is located andthe substrate, a capacitance between the metal layer where the bit lineis located and the word line, a capacitance between the bit line and theadjacent bit lines, and a capacitance between the metal layer where thebit line is located and the control gate.

The coupling voltage between the shielding layer and the metal layerwhere the bit line is located may be converted into a coupling voltagebetween the ground and the metal layer where the bit line is located byproviding the shielding layer and grounding the shielding structure 45.Therefore, the coupling voltage of the metal layer where the bit line islocated may be reduced, and the interference in a programming operationmay be reduced.

In one embodiment, referring to FIG. 4, in a non-limiting example, inother words, when ‘0’ is stored in the memory cells corresponding to thebit line 42 and the bit line 44, and ‘1’ is written into the memory cellthrough the bit line 43 in the middle position, the voltage on the bitline 43 in the middle position as an example may be referred to Equation1 according to the law of conservation of electric charge when theshielding structure 45 is not provided:

$\begin{matrix}{{{V\left( {{BL}(1)} \right)} = \frac{\begin{matrix}{{{{VBL}(0)}*{{CBL}(0)}*2} + {{V({cg})}*C({cg})} +} \\{{V({wl})*{C({wl})}} + {{V({sub})}*{C({sub})}}}\end{matrix}}{{{{CBL}(0)}*2} + {C({cg})} + {C({wl})} + {C({sub})}}};} & (1)\end{matrix}$where, the voltage on the bit line 42 may be equal to the voltage on thebit line 44, and may be referred to ‘VBL(0)’; the bit line capacitancein the region ‘A1’ where the bit line 42 is located may be equal to thebit line capacitance in the region ‘A3’ where the bit line 44 islocated, and may be referred to ‘CBL (0)’; ‘V (cg)’ may represent thecontrol gate voltage (such as the voltage on the control gate 23illustrated in FIG. 2); ‘C (cg)’ may represent the capacitance of thecontrol gate; ‘V (wl)’ may represent the word line voltage (the voltageon the word line); ‘C (wl)’ may represent the word line capacitance; ‘V(sub)’ may represent the substrate voltage; and ‘C (sub)’ may representthe substrate capacitance.

When the shielding structure 45 is provided, the voltage on the bit line43 in the middle position may be referred to Equation 2 according to thelaw of conservation of electric charge:

$\begin{matrix}{{{V\left( {{BL}(1)} \right)} = \frac{\begin{matrix}{{{{VBL}(0)}*{{CBL}(0)}*2} + {{V({cg})}*C({cg})} +} \\{{V({wl})*{C({wl})}} + {{V({sub})}*{C({sub})}} + {{V\left( {M\; 2\_ 0} \right)}*{C\left( {M\; 2\_ 0} \right)}}}\end{matrix}}{{{{CBL}(0)}*2} + {C({cg})} + {C({wl})} + {C({sub})} + {C\left( {M\; 2\_ 0} \right)}}};} & (2)\end{matrix}$where ‘V (M2-0)’ may represent the voltage on the shielding layer, andthe ‘C (M2-0)’ may represent the capacitance of the shielding layer.Since the shielding structure is ground, the value of ‘V (M2-0)’ may bezero. Thus, compared to the Equation 1, the numerator of Equation 2 maybe equal to the numerator of Equation 1, while the denominator ofEquation 2 may be ‘C (M2-0)’ larger than the denominator of Equation 1.Therefore, the coupling voltage of the bit line 43 in the middleposition may be reduced after providing the shielding structure 45, andthe influence on the bit lines on both sides of the bit line 43 may bereduced.

The following four structures may be provided for comparison. Instructure ‘A’: Providing a bit line in the first metal layer, andproviding a word line in the second metal layer. In structure ‘B’:Providing a bit line in the first metal layer, and providing a word linein the third metal layer (the second metal layer may be not ground). Instructure ‘C’: Providing a bit line in the first metal layer and thesecond metal layer, and providing a word line in the third metal layer.In structure ‘D’: Providing a bit line in the first metal layer, provinga word line in the third metal layer, and providing a shielding layerthat is ground in the second metal layer. The detailed comparisonresults are shown in Table 1.

‘V_M1BL’ may represent the coupling voltage in units of ‘V’, ‘C_M1BL’may represent the capacitance, between the first metal layer and eachportion represented in the first row of the Table 1, in units of ‘fF’.‘V_M2BL’ may represent the voltage, coupled to the bit line in thesecond metal layer, in units of ‘V’, and ‘C_M2BL’ may represent thecapacitance, between the second metal layer and each portion representedin the first row of the Table 1, in units of ‘fF’.

‘BL_(1)’ may represent a bit line storing a data ‘1’, BL_(0)′ mayrepresent a bit line storing a data ‘0’, ‘CG’ may represent the controlgate, ‘WL’ may represent the word line, ‘Sub’ may represent thesubstrate, and ‘M2_0’ may represent the disclosed shielding layer.

TABLE 1 Voltage, Capaci- tance BL_(1) BL_(0) CG WL Sub M2_0 A V_M1BL 8.913 0 16 0 NA C_M1BL 0.6732 0.3580 0.1320 0.0822 0.1010 B V_M1BL 8.5 13 016 0 C_M1BL 0.6381 0.3580 0.1320 0.0471 0.1010 C V_M1BL 7.4 13 0 16 0C_M1BL 0.5121 0.2320 0.1320 0.0471 0.1010 V_M2BL 10.4 13 0 16 0 C_M2BL0.4450 0.2540 0.0078 0.0822 0.1010 D V_M1BL 6.7 13 0 16 0 0 C_M1BL0.8021 0.3580 0.1320 0.0471 0.1010 0.1640

Referring to Table 1, the coupling voltage on the BL_(1) in thedisclosed structure ‘D’ is the smallest, and may have minimum influenceon adjacent bit lines.

The present disclosure also provides a method for fabricating a memory.FIG. 5 illustrates a flowchart of the exemplary fabrication method forforming the memory. Referring to FIG. 5, the method may include thefollowing.

S101: Providing a bit-line layer on a semiconductor substrate. Bit linesmay be provided in the bit-line layer. The method may also includeproviding a shielding layer on the bit-line layer.

S102: Providing a shielding layer on the bit-line layer. Conductiveshielding structure may be provided in the shielding layer. Theconductive shielding structure in the shield layer may be grounded toavoid the accumulation of charges in the shielding structure. In oneembodiment, the shielding structure may be within a top-view projectionarea of the bit lines, and an edge of the shielding structure maycoincide with entire or portions of a projection area of the bit lines.The shielding structure may be made of a conductive material, such ascopper, aluminum, or polysilicon, etc. The shielding structure mayinclude comb-shaped metal structures. Each comb-shaped metal structuremay include a first comb-shaped metal structure and a second comb-shapedmetal structure that are engaged with each other. Both the firstcomb-shaped metal structure and the second comb-shaped metal structuremay be grounded.

S103: Providing a word-line layer on the shielding layer. Word lines maybe provided in the word-line layer.

In one embodiment, the method may also include providing a memorystructure in the semiconductor substrate. The memory structure mayinclude a drain, a selection gate, a control gate, and a source. Inaddition, the method may include providing a connection structure in theshielding layer and electrically isolated from the conductive shieldingstructure. The connection structure may electrically connect one of theword line and the bit line to the memory structure in the semiconductorsubstrate. In another embodiment, the method may include providing alogical interconnection structure in the shielding layer outside atop-view projection area of the bit lines. The logical interconnectionstructure is made of one of copper, aluminum and polysilicon.

As disclosed herein, the shielding layer may be provided on the bit-linelayer. When performing a write operation via a bit line, a high voltagemay need to be applied on the bit line, causing write interference toadjacent bit lines. The write interference between the bit line andadjacent bit lines may usually result from the coupling voltage. Thecoupling voltage may be reduced by providing the shielding layer andgrounding the shielding structure, and the coupling capacitance betweenthe bit-line layer and adjacent metal layers may be converted into acoupling capacitance between the bit-line layer and ground. The writeinterference between the bit line and the adjacent bit lines thereof maybe further reduced.

Further, the shielding structure may be within the projection area ofthe bit line. In other words, the bit line in the memory may be coveredwith the shielding structure. Since the coupling voltage results fromthe bit line, the shielding structure within the projection area of thebit line may reduce the coupling voltage. Other components, such as acomponent having logical interconnection functions, may be provided inthe regions of the shielding layer outside the shielding structure.Thus, the write interference between the bit line and the adjacent bitlines may be reduced during the write operation by providing theshielding structure within the projection area of the bit line, and theregions of the shielding layer outside the shielding structure may besufficiently utilized.

In one embodiment, the disclosed memory may be an electrically erasableprogrammable read-only memory (EEPROM). In another embodiment, thedisclosed memory may be a memory in a contact IC card, such as a memoryin a bank card. The yield of the IC card may be greatly improved,approximately 20%, by using the disclosed memory.

The above detailed descriptions only illustrate certain exemplaryembodiments of the present disclosure, and are not intended to limit thescope of the present disclosure. Those skilled in the art can understandthe specification as whole and technical features in the variousembodiments can be combined into other embodiments understandable tothose persons of ordinary skill in the art. Any equivalent ormodification thereof, without departing from the spirit and principle ofthe present disclosure, falls within the true scope of the presentdisclosure.

What is claimed is:
 1. A memory, comprising: a bit-line layer, on asemiconductor substrate and having bit lines arranged in the bit-linelayer; a shielding layer, on the bit-line layer and having a conductiveshielding structure arranged in the shielding layer, wherein theconductive shielding structure is within a top-view projection area ofthe bit lines and is grounded; and a word-line layer, on the shieldinglayer and having word lines arranged in the word-line layer, wherein:the conductive shielding structure includes comb-shaped metalstructures.
 2. The memory according to claim 1, wherein: eachcomb-shaped metal structure of the conductive shielding structureincludes a first comb-shaped metal structure and a second comb-shapedmetal structure having comb teeth engaged with each other; and both thefirst comb-shaped metal structure and the second comb-shaped metalstructure are grounded.
 3. A memory, comprising: a bit-line layer, on asemiconductor substrate and having bit lines arranged in the bit-linelayer; a shielding layer, on the bit-line layer and having a conductiveshielding structure arranged in the shielding layer, wherein theconductive shielding structure is grounded and a top-view projectionarea of the bit lines are completely covered by a top-view projectionarea of the conductive shielding structure; and a word-line layer, onthe shielding layer and having word lines arranged in the word-linelayer; a memory structure in the semiconductor substrate, including adrain, a selection gate, a control gate, and a source; and a connectionstructure, in the shielding layer and electrically isolated from theconductive shielding structure, wherein the connection structureelectrically connects one of the word line and the bit line to thememory structure in the semiconductor substrate.
 4. The memory accordingto claim 3, wherein: the connection structure is outside a top-viewprojection area of the bit lines.
 5. The memory according to claim 3,wherein: the word line is connected to the selection gate of the memorystructure via the connection structure.
 6. A memory, comprising: abit-line layer, on a semiconductor substrate and having bit linesarranged in the bit-line layer; a shielding layer, on the bit-line layerand having a conductive shielding structure arranged in the shieldinglayer, wherein the conductive shielding structure is grounded and atop-view projection area of the bit lines are completely covered by atop-view projection area of the conductive shielding structure; aword-line layer, on the shielding layer and having word lines arrangedin the word-line layer; and a logical interconnection structure, in theshielding layer outside a top-view projection area of the bit lines,wherein: the logical interconnection structure is made of one or more ofcopper, aluminum and polysilicon.
 7. The memory according to claim 1,wherein: the conductive shielding structure is made of one or more ofcopper, aluminum, and polysilicon.
 8. The memory according to claim 1,further including: a memory structure in the semiconductor substrate,including a drain, a selection gate, a control gate, and a source. 9.The memory according to claim 1, further including: a logicalinterconnection structure, in the shielding layer outside a top-viewprojection area of the bit lines, wherein: the logical interconnectionstructure is made of one or more of copper, aluminum and polysilicon.10. The memory according to claim 3, wherein: the conductive shieldingstructure is made of one or more of copper, aluminum, and polysilicon.11. The memory according to claim 3, further including: a memorystructure in the semiconductor substrate, including a drain, a selectiongate, a control gate, and a source.
 12. The memory according to claim 6,wherein: the conductive shielding structure is made of one or more ofcopper, aluminum, and polysilicon.
 13. The memory according to claim 6,further including: a memory structure in the semiconductor substrate,including a drain, a selection gate, a control gate, and a source.